june 2011 (hvm-1058-b) 1 < hvigbt modules > CM750HG-130R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules CM750HG-130R z i c 750a z v ces 6500v z 1-element in a pack z high insulated type z lpt-igbt / soft recovery diode z alsic baseplate application traction drives, high reliability conv erters / inverters, dc choppers outline drawing & circuit diagram dimensions in mm
< hvigbt modules > CM750HG-130R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules june 2011 2 maximum ratings symbol item conditions ratings unit v ge = 0v, t j = +125 c 6500 v ge = 0v, t j = +25c 6300 v ces collector-emitter voltage v ge = 0v, t j = ? 50c 5700 v v ges gate-emitter voltage v ce = 0v, t j = 25c 20 v i c dc, t c = 95c 750 a i crm collector current pulse (note 1) 1500 a i e dc 750 a i erm emitter current (note 2) pulse (note 1) 1500 a p tot maximum power dissipation (note 3) t c = 25c, igbt part 10400 w v iso isolation voltage rms, sinusoidal, f = 60hz, t = 1min. 10200 v v e partial discharge extinction volt age rms, sinusoidal, f = 60hz, q pd 10 pc 5100 v t j junction temperature ? 50 ~ +150 c t jop operating junction temperature ? 50 ~ +125 c t stg storage temperature ? 55 ~ +125 c t psc short circuit pulse width v cc = 4500 v, v ce v ces , v ge = 15v, t j = 125c 10 s electrical characteristics limits symbol item conditions min typ max unit t j = 25c ? ? 24.0 i ces collector cutoff current v ce = v ces , v ge = 0v t j = 125c ? 24.0 ? ma v ge(th) gate-emitter threshold voltage v ce = 10v, i c = 75ma, t j = 25c 5.8 6.3 6.8 v i ges gate leakage current v ge = v ges , v ce = 0v, t j = 25c ? 0.5 ? 0.5 a c ies input capacitance ? 136.0 ? nf c oes output capacitance ? 8.6 ? nf c res reverse transfer capacitance v ce = 10v, v ge = 0v, f = 100khz t j = 25c ? 4.0 ? nf q g total gate charge v cc = 3600v, i c = 750a, v ge = 15v ? 10.5 ? c t j = 25c ? 3.90 ? v cesat collector-emitter saturation voltage i c = 750a (note 4) v ge = 15v t j = 125c ? 4.80 5.60 v t j = 25c ? 1.20 ? t d(on) turn-on delay time t j = 125c ? 1.15 1.80 s t j = 25c ? 0.20 ? t r turn-on rise time t j = 125c ? 0.22 0.50 s t j = 25c ? 3.50 ? e on(10%) turn-on switching energy (note 5) t j = 125c ? 4.10 ? j t j = 25c ? 3.85 ? e on turn-on switching energy (note 6) v cc = 3600v i c = 750a v ge = 15v r g(on) = 3.9 l s = 150nh inductive load t j = 125c ? 4.80 ? j t j = 25c ? 7.30 ? t d(off) turn-off delay time t j = 125c ? 7.80 9.00 s t j = 25c ? 0.36 ? t f turn-off fall time t j = 125c ? 0.44 1.00 s t j = 25c ? 3.40 ? e off(10%) turn-off switching energy (note 5) t j = 125c ? 4.60 ? j t j = 25c ? 3.60 ? e off turn-off switching energy (note 6) v cc = 3600v i c = 750a v ge = 15v r g(off) = 33 l s = 150nh inductive load t j = 125c ? 4.90 ? j
< hvigbt modules > CM750HG-130R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules june 2011 3 electrical characteristics (continuation) limits symbol item conditions min typ max unit t j = 25c ? 3.00 ? v ec emitter-collector voltage (note 2) i e = 750a (note 4) v ge = 0v t j = 125c ? 3.20 3.80 v t j = 25c ? 0.55 ? t rr reverse recovery time (note 2) t j = 125c ? 0.75 ? s t j = 25c ? 900 ? i rr reverse recovery current (note 2) t j = 125c ? 1000 ? a t j = 25c ? 750 ? q rr reverse recovery charge (note 2) t j = 125c ? 1100 ? c t j = 25c ? 1.05 ? e rec(10%) reverse recovery energy (note 2)(note 5) t j = 125c ? 1.85 ? j t j = 25c ? 1.40 ? e rec reverse recovery energy (note 2)(note 6) v cc = 3600v i c = 750a v ge = 15v r g(on) = 3.9 l s = 150nh inductive load t j = 125c ? 2.10 ? j thermal characteristics limits symbol item conditions min typ max unit r th (j -c ) q junction to case, igbt part ? ? 12.0 k/kw r th (j -c ) d thermal resistance junction to case, fwdi part ? ? 22.0 k/kw r th ( c-s ) contact thermal resistance case to heat sink, g rease = 1w/m k, d ( c-s ) = 100 m ? 6.0 ? k/kw mechanical characteristics limits symbol item conditions min typ max unit m t m : main terminals screw 7.0 ? 22.0 nm m s m : mounting screw 3.0 ? 6.0 nm m t mounting torque m : auxiliary terminals screw 1.0 ? 3.0 nm m mass ? 1.4 ? kg cti comparative tracking index 600 ? ? ? d a clearance 26.0 ? ? mm d s creepage distance 56.0 ? ? mm l p ce parasitic stray inductance ? 15.0 ? nh r cc?+ee? internal lead resistance tc = 25c ? 0.18 ? m r g internal gate resistance tc = 25c ? 2.6 ? note1. pulse width and repetition rate shoul d be such that junction temperature (t j ) does not exceed topmax rating. 2. the symbols represent characteri stics of the anti-parallel, emitte r to collector free-wheel diode (fwd i ). 3. junction temperature (t j ) should not exceed t jmax rating (150c). 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 5. e on(10%) / e off(10%) / e rec(10%) are the integral of 0.1v ce x 0.1i c x dt. 6. definition of all items is according to iec 60747, unless otherwise specified.
< hvigbt modules > CM750HG-130R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules june 2011 4 performance curves output characteristics (typical) 0 250 500 750 1000 1250 1500 02468 collector - emitter voltage [v] collector current [a] v ge = 10v v ge = 11v v ge = 15v v ge = 13v t j = 125c collector-emitter saturation voltag e characteristics (typical) 0 250 500 750 1000 1250 1500 02468 collector-em itter saturation voltage [v] collector current [a] v ge = 15v t j = 125c t j = 25c transfer characteristics (typical) 0 250 500 750 1000 1250 1500 0 4 8 12 16 gate - em itter voltage [v] collector current [a] t j = 25c v ce = v ge t j = 125c free-wheel diode forward characteristics (typical) 0 250 500 750 1000 1250 1500 012345 emitter-collector voltage [v] emitter current [a] t j = 25c t j = 125c
< hvigbt modules > CM750HG-130R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules june 2011 5 performance curves capacitance characteristics (typical) 1 10 100 1000 0.1 1 10 100 collector-emitter voltage [v] capacitance [nf] c ies v ge = 0v, t j = 25c f = 100khz c oes c res half-bridge switching energy characteristics (typical) 0 2 4 6 8 10 12 14 0 250 500 750 1000 1250 1500 collector current [a] switching energies [j] v cc = 3600v, v ge = 15v r g(on) = 3.9 ? , r g(off) = 33 ? l s = 150nh, t j = 125c inductive load e off e on e rec gate charge characteristics (typical) -15 -10 -5 0 5 10 15 20 024681012 gate charge [c] gate-emitter voltage [v] v ce = 3600v, i c = 750a t j = 25c half-bridge switching energy characteristics (typical) 0 2 4 6 8 10 12 0246810 gate res is tor [ohm ] switching energies [j] e rec v cc = 3600v, i c = 750a v ge = 15v, l s = 150nh t j = 125c, inductive load e on
< hvigbt modules > CM750HG-130R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules june 2011 6 performance curves half-bridge switching energy characteristics (typical) 0 2 4 6 8 10 12 0 1020304050 gate res is tor [ohm ] switching energies [j] v cc = 3600v, i c = 750a v ge = 15v, l s = 150nh t j = 125c, inductive load e off free-wheel diode reverse recovery characteristics (typical) 0.1 1 10 100 100 1000 10000 emitter current [a] reverse recovery time [s] 10 100 1000 10000 reverse recovery current [a] t rr i rr v cc = 3600v, v ge = 15v r g(on) = 3.9 ? , l s = 150nh t j = 125c, inductive load half-bridge switching time characteristics (typical) 0.01 0.1 1 10 100 100 1000 10000 collector current [a] switching times [s] v cc = 3600v, v ge = 15v r g(on) = 3.9 ? , r g(off) = 33 ? l s = 150nh, t j = 125c inductive load t r t d(on) t d(off) t f reverse bias safe operating area (rbsoa) 0 500 1000 1500 2000 2500 0 2000 4000 6000 8000 collector-emitter voltage [v] collector current [a] v cc 4500v, v ge = 15v t j = 125c, r g(off) = 33 ?
< hvigbt modules > CM750HG-130R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules june 2011 7 performance curves short circuit safe operating area (scsoa) 0 2 4 6 8 10 0 2000 4000 6000 8000 collector-emitter voltage [v] collector current [ka] v cc 4500v, v ge = 15v t j = 125c, r g(on) = 3.9 ? , r g(off) = 33 ? transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1 1.2 0.001 0.01 0.1 1 10 tim e [s ] normalized transient thermal impedance r th(j-c)q = 12.0k/kw r th(j-c)d = 22.0k/kw free-wheel diode reverse recovery safe operating area (rrsoa) 0 500 1000 1500 2000 2500 0 2000 4000 6000 8000 emitter-collector voltage [v] reverse recovery current [a] v cc 4500v, di/dt < 4.5ka/ s t j = 125c ? ? ? ? ? ? ? ? ? ? = ? ? ? ? ? ? ? ? ? ? = ? exp 1 r z i t n 1 i i ) c j ( th ) t ( 1234 r i [k/kw] : 0.0055 0.2360 0.4680 0.2905 t i [sec] : 0.0001 0.0131 0.0878 0.6247
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